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Strong Correlation Effects on Topological Quantum Phase Transitions in Three Dimensions

机译:中国拓扑量子相变的强相关效应   三个维度

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摘要

We investigate the role of short-ranged electron-electron interactions in aparadigmatic model of three dimensional topological insulators, using dynamicalmean-field theory and focusing on non magnetically ordered solutions. Thenon-interacting band-structure is controlled by a mass term M, whose valuediscriminates between three different insulating phases, a trivial bandinsulator and two distinct topologically non-trivial phases. We characterizethe evolution of the transitions between the different phases as a function ofthe local Coulomb repulsion U and find a remarkable dependence of the U -Mphase diagram on the value of the local Hund's exchange coupling J. However,regardless the value of J, following the evolution of the topologicaltransition line between a trivial band insulator and a topological insulator,we find a critical value of U separating a continuous transition from afirst-order one. When the Hund's coupling is significant, a Mott insulator isstabilized at large U . In proximity of the Mott transition we observe theemergence of an anomalous "Mott-like" strong topological insulating state.
机译:我们使用动态平均场理论并集中于非磁性有序解,研究了短距离电子-电子相互作用在三维拓扑绝缘子范式模型中的作用。非相互作用能带结构由质量项M控制,质量项M的值在三个不同的绝缘相,琐碎的带绝缘子和两个截然不同的拓扑非琐碎相之间进行区分。我们将不同相之间的跃迁演化表征为局部库仑排斥U的函数,并且发现U -M相图显着依赖于局部Hund交换耦合J的值。但是,无论J的值如何,遵循在平凡带状绝缘子和拓扑绝缘子之间的拓扑转换线的演化过程中,我们发现了将连续转换与一阶转换分开的U的临界值。当洪德的耦合很大时,莫特绝缘子在大U处稳定。在Mott过渡附近,我们观察到异常的“ Mott状”强拓扑绝缘状态的出现。

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